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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

Name: M28S NPN Tip Power Transistors TO92 Plastic Encapsulated PD 625mW
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : M28S

VCBO : 40V

VCEO : 20V

PD : 625mW

Product name : semiconductor triode type

Tstg : -55 ~+150Š

Power Mosfet Transistor : TO-92 Plastic-Encapsulate

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TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)

FEATURE

Ÿ High DC Current Gain and Large Current Capability

MARKING

M28S=Device code

Solid dot=Green molding compound device,

if none,the normal device

Z=Rank of hFE, XXX=Code

M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
M28S	TO-92	Bulk	1000pcs/Bag
M28S-TA	TO-92	Tape	2000pcs/Box

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Para meter	Value	Unit
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	20	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	1	A
P_D	Collector Power Dissipation	625	mW
R0 JA	Thermal Resist ance f rom Junction to Ambient	200	Š / W
T_j	Junction Temperature	150	Š
Tstg	Storage Temperature	-55 ~+150	Š

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C= 0.1mA ,I_E=0	40			V
Collector-emitter breakdown voltage	V(BR) CEO	I_C=1mA,I_B=0	20			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=0.1mA,I_C=0	6			V
Collector cut-off current	ICBO	V_CB=40V,I_E=0			1	µA
Collector cut-off current	ICEO	V_CE=20V,I_B=0			5	µA
Emitter cut-off current	IEBO	V_EB=5V,I_C=0			0.1	µA
DC current gain	hFE(1)	V_CE=1V, I_C=1mA	290
	hFE(2)	V_CE=1V, I_C=100mA	300		1000
	hFE(3)	V_CE=10V, I_C=300mA	300
	hFE(4)	V_CE=1V, I_C=500mA	300
Collector-emitter saturation voltage	VCE(sat)	I_C=600mA,I_B=20mA			0.55	V
Transition frequency	f_T	V_CE=10V,I_E=50mA ,f=30MHz	100			MHz

CLASSIFICATION OF h_FE(2)

RANK	B	C	D
RANGE	300-550	500-700	650-1000

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.300	4.700	0.169	0.185
D1	3.430		0.135
E	4.300	4.700	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.440	2.640	0.096	0.104
L	14.100	14.500	0.555	0.571
0		1.600		0.063
h	0.000	0.380	0.000	0.015

Product Tags:

tip pnp transistor

tip series transistors