D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

Name: D882 NPN Transistor Circuit NPN Power Transistor Collector Emitter Voltage 30v
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D882

Collector-Base VoltageCollector-Base Voltage : 40v

Collector-Emitter Voltage : 30v

Emitter-Base Voltage : 6V

Power mosfet transistor : TO-126 Plastic-Encapsulate

Material : Silicon

Type : Triode Transistor

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TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)

FEATURE

Power Dissipation

MARKING

D882=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
D882	TO-126	Bulk	200pcs/Bag
D882-TU	TO-126	Tube	60pcs/Tube

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	30	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	3	A
P_C	Collector Power Dissipation	1.25	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)_CBO	I_C = 100μA, I_E=0	40			V
Collector-emitter breakdown voltage	V(BR)_CEO	I_C = 10mA, I_B=0	30			V
Emitter-base breakdown voltage	V(BR)_EBO	I_E= 100μA, I_C=0	6			V
Collector cut-off current	ICBO	V_CB= 40 V, I_E=0			1	µA
Collector cut-off current	ICEO	V_CE= 30 V, I_B=0			10	µA
Emitter cut-off current	IEBO	V_EB= 6 V, I_C=0			1	µA
DC current gain	hFE	V_CE= 2 V, I_C= 1A	60		400
Collector-emitter saturation voltage	VCE (sat)	I_C= 2A, I_B= 0.2 A			0.5	V
Base-emitter saturation voltage	VBE (sat)	I_C= 2A, I_B= 0.2 A			1.5	V
Transition frequency	f_T	V_CE= 5V, I_C=0.1A f =10MHz		90		MHz

CLASSIFICATION OF h_FE(2)

Rank	R	O	Y	GR
Range	60-120	100-200	160-320	200-400

Typical Characteristics

D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
Symbol	Min	Max	Min	Max
A	2.500	2.900	0.098	0.114
A1	1.100	1.500	0.043	0.059
b	0.660	0.860	0.026	0.034
b1	1.170	1.370	0.046	0.054
c	0.450	0.600	0.018	0.024
D	7.400	7.800	0.291	0.307
E	10.600	11.000	0.417	0.433
e	2.290 TYP		0.090 TYP
e1	4.480	4.680	0.176	0.184
h	0.000	0.300	0.000	0.012
L	15.300	15.700	0.602	0.618
L1	2.100	2.300	0.083	0.091
P	3.900	4.100	0.154	0.161
Φ	3.000	3.200	0.118	0.126

D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

Product Tags:

tip series transistors

high power pnp transistor